s s s s f f f f p730 p730 p730 p730 rev.c nov.2008 copyright@winsemi semiconductor co.,ltd.,all rights reserved silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features features features features 5.5a,400v, r ds(on) (max 1.0 )@v gs =10v ultra-low gate charge(typical 3 2 nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general general general general description description description description this power mosfet is produced using winsemi s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units v dss drain source voltage 400 v i d continuous drain current(@tc=25 ) 5.5 a continuous drain current(@tc=100 ) 2.9 a i dm drain current pulsed (note1) 22 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 330 mj e ar repetitive avalanche energy (note 1) 7.4 mj dv/dt peak diode recovery dv/dt (note 3) 4 v/ns p d total power dissipation(@tc=2 5 ) 74 w derating factor above 25 0.59 w/ t j, t stg junction and storage temperature -55~150 t l channel temperature 300 *drain *drain *drain *drain current current current current limited limited limited limited by by by by junction junction junction junction temperature temperature temperature temperature thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units min min min min typ typ typ typ max max max max r qjc thermal resistance, junction-to-case - - 1.7 /w r qcs thermal resistance, case-to-sink - 0.5 - /w r qja thermal resistance, junction-to-ambient - - 62.5 /w
s s s s fp730 fp730 fp730 fp730 steady,all steady,all steady,all steady,all for for for for your your your your advance advance advance advance 2 / 7 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 40 0 v, v gs = 0 v - - 1 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 4 00 - - v break voltage temperature coefficient bv dss / tj i d =250 a, referenced to 25 - 0.4 - v/ gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 2 - 4 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 2.75 a - 0.83 1 forward transconductance gfs v ds = 50 v, i d = 2.75 a - 4.5 - s input capacitance c iss v ds = 25 v, v gs = 0 v v v v , f = 1 mhz - 550 720 pf reverse transfer capacitance c rss - 85 110 output capacitance c oss - 22 29 switching time rise time tr v dd = 200 v, i d = 3.5 a r g = 25 (note4,5) - 15 40 ns turn ? on time ton - 55 120 fall time tf - 85 180 turn ? off time toff - 50 110 total gate charge (gate ? source plus gate ? drain) qg v dd = 320 v, v gs = 10 v, i d = 3.5 a (note4,5) - 32 38 nc gate ? source charge qgs - 4.3 5.7 gate ? drain ( miller ) charge qgd - 14 22 source source source source ? ? ? ? drain drain drain drain ratings ratings ratings ratings and and and and characteristics characteristics characteristics characteristics (ta (ta (ta (ta = = = = 25 25 25 25 c) c) c) c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 5.5 a pulse drain reverse current i drp - - - 22 a forward voltage (diode) v dsf i dr = 5.5 a, v gs = 0 v - 1.4 1.5 v reverse recovery time t rr i dr = 5.5 a, v gs = 0 v, di dr / dt = 100 a / s - 265 530 ns reverse recovery charge q rr - 2.32 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=18.5mh,i as =5.5a,v dd =50v,r g =25 ,starting t j =25 3.i sd 5.5a,di/dt 300a/us, v dd s s s s fp730 fp730 fp730 fp730 steady,all steady,all steady,all steady,all for for for for your your your your advance advance advance advance 3 / 7
s s s s fp730 fp730 fp730 fp730 steady,all steady,all steady,all steady,all for for for for your your your your advance advance advance advance 4 / 7
s s s s fp730 fp730 fp730 fp730 steady,all steady,all steady,all steady,all for for for for your your your your advance advance advance advance 5 / 7 fig.10 fig.10 fig.10 fig.10 gate gate gate gate test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.11 fig.11 fig.11 fig.11 resistive resistive resistive resistive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.12 fig.12 fig.12 fig.12 unclamped unclamped unclamped unclamped inductive inductive inductive inductive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
s s s s fp730 fp730 fp730 fp730 steady,all steady,all steady,all steady,all for for for for your your your your advance advance advance advance 6 / 7 fig.13 fig.13 fig.13 fig.13 peak peak peak peak diode diode diode diode recovery recovery recovery recovery dv/dt dv/dt dv/dt dv/dt test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
s s s s fp730 fp730 fp730 fp730 steady,all steady,all steady,all steady,all for for for for your your your your advance advance advance advance 7 / 7 to-220c to-220c to-220c to-220c package package package package dimension dimension dimension dimension unit: mm
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